DIODES vs. MOSFETs - A Comparative Chart
Reproducibility is the biggest difference when comparing systems. As seen in the chart, which uses information from the manufacturer’s literature, the MOSFET detectors are much less reproducible than an ISORAD™ or QED™ diode detector. Reproducibility is defined as the percentage difference between consecutive measurements for the same radiation dose under the same conditions. The data in the following table was at 1 σ (32% of the readings will have worse reproducibility). If the reproducibility is calculated at 3 σ, it will be much worse for MOSFET detectors, but the same for Isorad and QED diodes.
Furthermore, certain MOSFET characteristics are voided if the
detector is used for dmax measurements, which is usually the method of choice.
For MOSFETs, buildup must be added in different amounts depending on energy to
provide a reading at dmax. (DIODES do not require this.) Once buildup is added
to a MOSFET, certain advantages, such as low attenuation, low energy dependence,
and “one” detector for multiple energies evaporate.
It is important to note that the QED and ISORAD-3™ detector is available
without buildup if so desired. Also, the ISORAD-3™ is isotropic, meaning it can
be irradiated from any angle along the x-axis with less than a 1% variation in
response.
The MOSFETs also suffer from a very short lifetime, creep-up effect, signal
fading, and a lack of real time reading.
Comparative Table
|
|
ISORAD™ QED™ |
MOSFET detectors |
ADVANTAGE |
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|
TN-RD-50 |
TN-RD-60 |
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SENSITIVITY |
0.3 nC/cGy |
1 mV/cGy (.0000014nC/cGy) |
2.7 mV/cGy (.0000038nC/cGy) |
DIODES |
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|
REPRODUC-IBILITY (at 1 σ) |
>1 cGy |
< 0.5% |
20 cGy |
< 8% |
20 cGy |
< 3% |
DIODES |
|
100 cGy |
< 3% |
100 cGy |
< 1.2% |
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|
200 cGy |
< 2% |
200 cGy |
< 0.8% |
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|
LIFETIME |
>10,000 Gy |
200 Gy |
70 Gy |
DIODES |
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|
CREEP-UP EFFECT |
None |
Up to 4 mV 4% for 100 cGy, 20% for 20 cGy |
DIODES |
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|
SIGNAL FADING |
N/A |
Up to 2% for 200cGy at 15 minutes, possibly greater for lower doses. |
DIODES |
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|
DETECTOR SIZE (mm ^ 2) |
1.5 diameter or Isorad, 0.8 x 0.8 for QED |
0.2 X 0.2 |
MOSFET |
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|
BUILDUP at dmax |
Inherent buildup included in diode |
Must add different buildup depending on energy. Adding buildup nullifies MOSFET claims to no attenuation, low energy dependence, and one detector for multiple energies. |
DIODES |
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|
DIRECTIONAL RESPONSE within 180˚ |
ISORAD: |
< ±2%, test conditions not specified |
DIODES |
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