SunSILICON™ and SunSILICON™ P are precision-engineered silicon diode detectors for advanced relative dosimetry in cylindrical water phantoms.
Designed to meet evolving clinical needs, these waterproof detectors provide high signal fidelity and robust stability, plus compatibility with IMRT, SRT, and IGRT techniques.
Key Benefits
- Custom, fully guarded p-type silicon diode
- Small active volume of 0.053 mm³ for high spatial resolution
- High sensitivity for faster scanning speeds
- Leading radiation hardness and leakage characteristics for better data quality
- Water-equivalent housing using HE Solid Water®
- Clearly marked housing for simplified setup
- Consistent detector-to-detector performance enabled by tighter mechanical tolerances
- Low dose per pulse dependence
SunSILICON™
An unshielded silicon diode detector
for relative electron and small photon
field dosimetry
| Field Size Range | (1 x 1) cm² to (10 x 10) cm² (photons) (1 x 1) cm² to (40 x 40) cm² (electrons) | |
| Smallest Field Size* | (0.4 x 0.4) cm² |
* Refer to IAEA TRS-483 or AAPM TG-155 for the methodology of applying field output correction factors to ensure high-accuracy output factor measurements in very small photon fields.
SunSILICON™ P
A shielded silicon diode detector
for relative photon dosimetry
| Field Size Range | (2 x 2) cm² - (40 x 40) cm² (photons) | |
| Smallest Field Size* | (1.2 x 1.2) cm² |
* Refer to IAEA TRS-483 or AAPM TG-155 for the methodology of applying field output correction factors to ensure high-accuracy output factor measurements in very small photon fields.
“These detectors strengthen our portfolio for commissioning electron linear accelerators through superior measurement precision and handling.”
Add the SunSILICON and SunSILICON P detectors to your toolkit
Resources
Publications
- Characterization of two new unshielded and shielded silicon diode detectors for external beam radiation therapy: SunSILICON and SunSILICON P
- Field Output Correction Factors of Novel Unshielded and Shielded Silicon Diode Detectors: SunSILICON and SunSILICON P
- Characterization of SunSILICON and SunSILICON P Detectors for Photon and Electron Dosimetry in Radiation Therapy
Webinars & Videos
Specifications
External Dimensions (Diameter x length) |
8.22 mm x 59 mm |
Cable Length |
1.5 meters nominal |
Detector Type |
Unshielded p-type silicon diode |
Field Size Range |
(1 x 1) cm² to (10 x 10) cm² (photons) |
Smallest Field Size* |
(0.4 x 0.4) cm² |
Sensitivity |
36 nC/Gy |
Output Polarity |
Negative |
Connector |
BNC or TNC |
Impedance |
> 1000 MΩ |
Active Volume |
0.053 mm³ |
Water Equivalent Build-up |
1.25 mm |
Reference Point |
1 mm from top surface, as indicated by crosshair markings |
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External Dimensions (Diameter x length) |
8.22 mm x 59 mm |
Cable Length |
1.5 meters nominal |
Detector Type |
Shielded p-type silicon diode |
Field Size Range |
(2 x 2) cm² - (40 x 40) cm² (photons) |
Smallest Field Size* |
(1.2 x 1.2) cm² |
Sensitivity |
38 nC/Gy |
Output Polarity |
Negative |
Connector |
BNC or TNC |
Impedance |
> 1000 MΩ |
Active Volume |
0.053 mm³ |
Water Equivalent Build-up |
1.25 mm |
Reference Point |
1 mm from top surface, as indicated by crosshair markings |
* Refer to IAEA TRS-483 or AAPM TG-155 for the methodology of applying field output correction factors to ensure high-accuracy output factor measurements in very small photon fields. |
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